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Description

Molecular Beam Epitaxy (MBE) is a process by which semiconductor films are grown on the substrate by physical vapor deposition of the source material in an ultra high vacuum environment. Spatial variations in flux are a result of the shape of the crucible and the geometry of the growth chamber. A process simulation tool for MBE based on a phenomenological model is proposed and elaborated. The tool can be used in industry to simulate the effusion and deposition of molecular beams by taking into account different parameters that influence the process. Additionally, it can generate deposition profiles created by effusing flux species, on the platen containing the wafers.

Contributors

Author Ramprasad Vijayagopal

Author Rama Venkat

Product Details

DUIN 8DRRPA4K5VO

GTIN 9783838369389

Language English

Pages 104

Product type Paperback

Flux Profile Modeling using Monte Carlo Simulation

A simulation tool for deposition processess using Molecular Beam Epitaxy

Ramprasad Vijayagopal

£40.99

Seller: Dodax EU

Delivery date: between Tuesday, September 29 and Thursday, October 1

Condition: New

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