Self-Organized Quantum Dots for Memories - Electronic Properties and Carrier Dynamics

by Tobias Nowozin
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Tobias Nowozin Self-Organized Quantum Dots for Memories - Electronic Properties and Carrier Dynamics
Tobias Nowozin - Self-Organized Quantum Dots for Memories - Electronic Properties and Carrier Dynamics

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Description

Today’s semiconductor memory market is divided between two types of memory: DRAM and Flash. Each has its own advantages and disadvantages. While DRAM is fast but volatile, Flash is non-volatile but slow. A memory system based on self-organized quantum dots (QDs) as storage node could combine the advantages of modern DRAM and Flash, thus merging the latter’s non-volatility with very fast write times.


This thesis investigates the electronic properties of and carrier dynamics in self-organized quantum dots by means of time-resolved capacitance spectroscopy and time-resolved current measurements. The first aim is to study the localization energy of various QD systems in order to assess the potential of increasing the storage time in QDs to non-volatility. Surprisingly, it is found that the major impact of carrier capture cross-sections of QDs is to influence, and at times counterbalance, carrier storage in addition to the localization energy. The second aim is to study the coupling between a layer of self-organized QDs and a two-dimensional hole gas (2DHG), which is relevant for the read-out process in memory systems. The investigation yields the discovery of the many-particle ground states in the QD ensemble. In addition to its technological relevance, the thesis also offers new insights into the fascinating field of nanostructure physics.

Contributors

Author:
Tobias Nowozin

Further information

Illustrations Note:
XVI, 153 p. 91 illus., 9 illus. in color.
Table of Contents:
Introduction.- Fundamentals.- Charge carriers in quantum dots.- Coupling of QDs to 2D gases.- Measurement methods.- Electronic properties of and storage times in QDs.- Carrier dynamics in quantum dots coupled to a 2DHG.- Summary and Outlook.- Storage time as a function of the localization energy.- Experimental details - Setup.- Samples.- Sample Processing.- DLTS: Error of graphical analysis.- Extrapolation of storage times.- Bibliography.
Remarks:
Nominated as an outstanding Ph.D. thesis by the Technical University of Berlin, Germany


Investigates novel heterostructures: GaSb/GaAs, InGaAs/GaP


Covers the detection of many-particle hole ground states in QDs


Presents a highly innovative memory concept


Includes supplementary material: sn.pub/extras

Media Type:
Softcover
Publisher:
Springer International Publishing
Language:
English
Edition:
Softcover reprint of the original 1st ed. 2014
Number of Pages:
153
Summary:
This thesis explores the challenges and advantages of a memory system based on self-organized quantum dots, which could combine the advantages of DRAM and Flash, merging non-volatility with very fast write times. Offers new insight into nanostructure physics.

Master Data

Product Type:
Paperback book
Release date:
27 August 2016
Package Dimensions:
0.235 x 0.155 x 0.01 m;
GTIN:
09783319378992
DUIN:
8UHTSS575JT
£73.26
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