Defects and positron states in Compound Semiconductors
by Pan, Sandip
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Four different application oriented III-V compound semiconductors have been selected for investigation using Positron annihilation spectroscopy (PAS) techniques. First one is Fe-doped semi-insulating Indium Phosphide. Positron annihilation lifetime spectroscopy (PALS) and Doppler broadening annihilation radiation (DBAR) measurements have been done in 140 MeV O(6+) ion implanted Fe-doped semi-insulating InP sample to observe irradiation induced defects formation and recovery of those defects with annealing temperature. Second, third & last samples are undoped Indium Antimonide, undoped Indium Phosphide & n-type Gallium Arsenide. PALS & DBAR measurements have been carried out in 40 MeV alpha irradiated undoped InSb, undoped InP and n-type GaAs samples to observe irradiation induced defects formation and recovery of those defects with annealing temperature respectively.
LAP Lambert Academic Publishing
Dr. Sandip PanCitizenship: India.EDUCATION:Ph.D. in Physics from Visva-Bharati (Central University), India.PUBLICATIONS: In International Journals: Published: 13, My Researchgate page: https://www.researchgate.net/profile/Sandip_Pan
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26 July 2016
0.22 x 0.15 x 0.008 m; 0.263 kg